NAND gate in the context of "Boolean circuit"

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⭐ Core Definition: NAND gate

In digital electronics, a NAND (NOT AND) gate is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's laws, a two-input NAND gate's logic may be expressed as , making a NAND gate equivalent to inverters followed by an OR gate.

The NAND gate is significant because any Boolean function can be implemented by using a combination of NAND gates. This property is called "functional completeness". It shares this property with the NOR gate. Digital systems employing certain logic circuits take advantage of NAND's functional completeness.

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👉 NAND gate in the context of Boolean circuit

In computational complexity theory and circuit complexity, a Boolean circuit is a mathematical model for combinational digital logic circuits. A formal language can be decided by a family of Boolean circuits, one circuit for each possible input length.

Boolean circuits are defined in terms of the logic gates they contain. For example, a circuit might contain binary AND and OR gates and unary NOT gates, or be entirely described by binary NAND gates. Each gate corresponds to some Boolean function that takes a fixed number of bits as input and outputs a single bit.

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NAND gate in the context of Flash memory

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level, depending on whether the state of the bit line or word lines is pulled high or low; in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

Flash memory, a type of floating-gate memory, was invented by Fujio Masuoka at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be written – to an erased location – or read independently. A flash memory device typically consists of one or more flash memory chips (each holding many flash memory cells), along with a separate flash memory controller chip.

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NAND gate in the context of NOR gate

The NOR (NOT OR) gate is a digital logic gate that implements logical NOR - it behaves according to the truth table to the right. A HIGH output (1) results if both the inputs to the gate are LOW (0); if one or both input is HIGH (1), a LOW output (0) results. NOR is the result of the negation of the OR operator. It can also in some senses be seen as the inverse of an AND gate. NOR is a functionally complete operation—NOR gates can be combined to generate any other logical function. It shares this property with the NAND gate. By contrast, the OR operator is monotonic as it can only change LOW to HIGH but not vice versa.

In most, but not all, circuit implementations, the negation comes for free—including CMOS and TTL. In such logic families, OR is the more complicated operation; it may use a NOR followed by a NOT. A significant exception is some forms of the domino logic family.

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