Metal–oxide–semiconductor in the context of Application-specific integrated circuit


Metal–oxide–semiconductor in the context of Application-specific integrated circuit

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⭐ Core Definition: Metal–oxide–semiconductor

In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET).

The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, especially compared to bipolar junction transistors (BJTs). However, at high frequencies or when switching rapidly, a MOSFET may require significant current to charge and discharge its gate capacitance. In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity.

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👉 Metal–oxide–semiconductor in the context of Application-specific integrated circuit

An application-specific integrated circuit (ASIC /ˈsɪk/) is an integrated circuit (IC) chip customized for a particular use, rather than intended for general-purpose use, such as a chip designed to run in a digital voice recorder or a high-efficiency video codec. Application-specific standard product chips are intermediate between ASICs and industry standard integrated circuits like the 7400 series or the 4000 series. ASIC chips are typically fabricated using metal–oxide–semiconductor (MOS) technology, as MOS integrated circuit chips.

As feature sizes have shrunk and chip design tools improved over the years, the maximum complexity (and hence functionality) possible in an ASIC has grown from 5,000 logic gates to over 100 million. Modern ASICs often include entire microprocessors, memory blocks including ROM, RAM, EEPROM, flash memory and other large building blocks. Such an ASIC is often termed a SoC (system-on-chip). Designers of digital ASICs often use a hardware description language (HDL), such as Verilog or VHDL, to describe the functionality of ASICs.

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Metal–oxide–semiconductor in the context of Image sensor

An image sensor or imager is a device that detects and conveys information used to form an image. It does so by converting the variable attenuation of light waves (as they pass through or reflect off objects) into signals, small bursts of current that convey the information. The waves can be light or other electromagnetic radiation. Image sensors are used in electronic imaging devices of both analog and digital types, which include digital cameras, camera modules, camera phones, optical mouse devices, medical imaging equipment, night vision equipment such as thermal imaging devices, radar, sonar, and others. As technology changes, electronic and digital imaging tends to replace chemical and analog imaging.

The two main types of electronic image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor). Both CCD and CMOS sensors are based on metal–oxide–semiconductor (MOS) technology, with CCDs based on MOS capacitors and CMOS sensors based on MOSFET (MOS field-effect transistor) amplifiers. Analog sensors for invisible radiation tend to involve vacuum tubes of various kinds, while digital sensors include flat-panel detectors.

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Metal–oxide–semiconductor in the context of Active-pixel sensor

An active-pixel sensor (APS) is an image sensor where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor. CMOS sensors are used in digital camera technologies such as cell phone cameras, web cameras, most modern digital pocket cameras, most digital single-lens reflex cameras (DSLRs), mirrorless interchangeable-lens cameras (MILCs), and lensless imaging for, e.g., blood cells.

CMOS sensors emerged as an alternative to charge-coupled device (CCD) image sensors and eventually outsold them by the mid-2000s.

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Metal–oxide–semiconductor in the context of Electronics industry

The electronics industry is the industry that produces electronic devices. It emerged in the 20th century and is today one of the largest global industries. Contemporary society uses a vast array of electronic devices that are built in factories operated by the industry, which are almost always partially automated.

Electronic products are primarily assembled from metal–oxide–semiconductor (MOS) transistors and integrated circuits, the latter principally by photolithography and often on printed circuit boards.

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Metal–oxide–semiconductor in the context of Microprocessor

A microprocessor is a computer processor for which the data processing logic and control is included on a single integrated circuit (IC), or a small number of ICs. The microprocessor contains the arithmetic, logic, and control circuitry required to perform the functions of a computer's central processing unit (CPU). The IC is capable of interpreting and executing program instructions and performing arithmetic operations. The microprocessor is a multipurpose, clock-driven, register-based, digital integrated circuit that accepts binary data as input, processes it according to instructions stored in its memory, and provides results (also in binary form) as output. Microprocessors contain both combinational logic and sequential digital logic, and operate on numbers and symbols represented in the binary number system.

The integration of a whole CPU onto a single or a few integrated circuits using very-large-scale integration (VLSI) greatly reduced the cost of processing power. Integrated circuit processors are produced in large numbers by highly automated metal–oxide–semiconductor (MOS) fabrication processes, resulting in a relatively low unit price. Single-chip processors increase reliability because there are fewer electrical connections that can fail. As microprocessor designs improve, the cost of manufacturing a chip (with smaller components built on a semiconductor chip the same size) generally stays the same, according to Rock's law.

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Metal–oxide–semiconductor in the context of Memory chip

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.

Most types of semiconductor memory have the property of random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. This contrasts with data storage media such as CDs which read and write data consecutively and therefore the data can only be accessed in the same sequence it was written. Semiconductor memory also has much faster access times than other types of data storage; a byte of data can be written to or read from semiconductor memory within a few nanoseconds, while access time for rotating storage such as hard disks is in the range of milliseconds. For these reasons it is used for primary storage, to hold the program and data the computer is currently working on, among other uses.

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Metal–oxide–semiconductor in the context of Digital signal processor

A digital signal processor (DSP) is a specialized microprocessor chip, with its architecture optimized for the operational needs of digital signal processing. DSPs are fabricated on metal–oxide–semiconductor (MOS) integrated circuit chips. They are widely used in audio signal processing, telecommunications, digital image processing, radar, sonar and speech recognition systems, and in common consumer electronic devices such as mobile phones, disk drives and high-definition television (HDTV) products.

The goal of a DSP is usually to measure, filter or compress continuous real-world analog signals. Most general-purpose microprocessors can also execute digital signal processing algorithms successfully, but may not be able to keep up with such processing continuously in real-time. Also, dedicated DSPs usually have better power efficiency, thus they are more suitable in portable devices such as mobile phones because of power consumption constraints. DSPs often use special memory architectures that are able to fetch multiple data or instructions at the same time.

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Metal–oxide–semiconductor in the context of Logic family

In computer engineering, a logic family is one of two related concepts:

  • A logic family of monolithic digital integrated circuit devices is a group of electronic logic gates constructed using one of several different designs, usually with compatible logic levels and power supply characteristics within a family. Many logic families were produced as individual components, each containing one or a few related basic logical functions, which could be used as "building-blocks" to create systems or as so-called "glue" to interconnect more complex integrated circuits.
  • A logic family may also be a set of techniques used to implement logic within VLSI integrated circuits such as central processors, memories, or other complex functions. Some such logic families use static techniques to minimize design complexity. Other such logic families, such as domino logic, use clocked dynamic techniques to minimize size, power consumption and delay.

Before the widespread use of integrated circuits, various solid-state and vacuum-tube logic systems were used but these were never as standardized and interoperable as the integrated-circuit devices. The most common logic family in modern semiconductor devices is metal–oxide–semiconductor (MOS) logic, due to low power consumption, small transistor sizes, and high transistor density.

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Metal–oxide–semiconductor in the context of Sound chips

A sound chip is an integrated circuit (chip) designed to produce audio signals through digital, analog or mixed-mode electronics. Sound chips are typically fabricated on metal–oxide–semiconductor (MOS) mixed-signal chips that process audio signals (analog and digital signals, for both analog and digital data). They normally contain audio components such as oscillators, envelope controllers, samplers, filters, amplifiers, and envelope generators.

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Metal–oxide–semiconductor in the context of Metal gate

A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid-1970s, the "M" for metal has been replaced by polysilicon, but the name remained.

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Metal–oxide–semiconductor in the context of DRAM

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.

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Metal–oxide–semiconductor in the context of Memory cell (computing)

The memory cell is the fundamental structured block of computer memory. Usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.

Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today, the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM.

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