Transistor density in the context of "Logic family"

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👉 Transistor density in the context of Logic family

In computer engineering, a logic family is one of two related concepts:

  • A logic family of monolithic digital integrated circuit devices is a group of electronic logic gates constructed using one of several different designs, usually with compatible logic levels and power supply characteristics within a family. Many logic families were produced as individual components, each containing one or a few related basic logical functions, which could be used as "building-blocks" to create systems or as so-called "glue" to interconnect more complex integrated circuits.
  • A logic family may also be a set of techniques used to implement logic within VLSI integrated circuits such as central processors, memories, or other complex functions. Some such logic families use static techniques to minimize design complexity. Other such logic families, such as domino logic, use clocked dynamic techniques to minimize size, power consumption and delay.

Before the widespread use of integrated circuits, various solid-state and vacuum-tube logic systems were used but these were never as standardized and interoperable as the integrated-circuit devices. The most common logic family in modern semiconductor devices is metal–oxide–semiconductor (MOS) logic, due to low power consumption, small transistor sizes, and high transistor density.

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Transistor density in the context of Miniaturization

Miniaturization (Br.Eng.: miniaturisation) is the trend to manufacture ever-smaller mechanical, optical, and electronic products and devices. Examples include miniaturization of mobile phones, computers and vehicle engine downsizing. In electronics, the exponential scaling and miniaturization of silicon MOSFETs (MOS transistors) leads to the number of transistors on an integrated circuit chip doubling every two years, an observation known as Moore's law. This leads to MOS integrated circuits such as microprocessors and memory chips being built with increasing transistor density, faster performance, and lower power consumption, enabling the miniaturization of electronic devices.

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Transistor density in the context of 14 nanometer

The "14 nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22 nm" (or "20 nm") node. The "14 nm" was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following "22 nm" was expected to be "16 nm". All "14 nm" nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology.

Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "14nm" device is fourteen nanometers. For example, TSMC and Samsung's "10 nm" processes are somewhere between Intel's "14 nm" and "10 nm" processes in transistor density, and TSMC's "7 nm" processes are dimensionally similar to Intel's "10 nm" process.

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Transistor density in the context of 10 nanometer

In semiconductor fabrication, the International Technology Roadmap for Semiconductors (ITRS) defines the "10 nanometer process" as the MOSFET technology node following the "14 nm" node.

Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "10nm" device is ten nanometers. For example, GlobalFoundries' "7 nm" processes are dimensionally similar to Intel's "10 nm" process. TSMC and Samsung's "10 nm" processes are somewhere between Intel's "14 nm" and "10 nm" processes in transistor density. The transistor density (number of transistors per square millimetre) is more important than transistor size, since smaller transistors no longer necessarily mean improved performance, or an increase in the number of transistors.

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