Memory refresh in the context of Memory architecture

Delay-line memory is a form of computer memory, mostly obsolete, that was used on some of the earliest digital computers, and is reappearing in the form of optical delay lines. Like many modern forms of electronic computer memory, delay-line memory was a refreshable memory, but as opposed to modern random-access memory, delay-line memory was sequential-access.

Analog delay line technology had been used since the 1920s to delay the propagation of analog signals. When a delay line is used as a memory device, an amplifier and a pulse shaper are connected between the output of the delay line and the input. These devices recirculate the signals from the output back into the input, creating a loop that maintains the signal as long as power is applied. The shaper ensures the pulses remain well-formed, removing any degradation due to losses in the medium.

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell.

While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.