Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the target's physical, chemical, or electrical properties. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (tens of MeV) can cause nuclear transmutation.
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👉 Ion implantation in the context of Photolithography
Photolithography (also known as optical lithography) is a process used in the manufacturing of integrated circuits. It involves using light to transfer a pattern onto a photoresist layer deposited on a sample, typically a silicon wafer.
The process begins with a photosensitive material, called a photoresist, being applied to the substrate. A photomask that contains the desired pattern is then placed over the photoresist. Light is shone through the photomask, exposing the photoresist in certain areas. The exposed areas undergo a chemical change, making them either soluble or insoluble in a developer solution. After development, the pattern is transferred onto the sample through etching, chemical vapor deposition, or ion implantation processes.
- ⭐ Core Definition: Ion implantation
- 👉 Ion implantation in the context of Photolithography
- Ion implantation in the context of Silicon wafer
- Ion implantation in the context of Semiconductor device fabrication
- Ion implantation in the context of Particle accelerator
- Ion implantation in the context of X-ray photoelectron spectroscopy
Ion implantation in the context of Silicon wafer
In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si, silicium), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells.
The wafer serves as the substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping, ion implantation, etching, thin-film deposition of various materials, and photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and packaged as an integrated circuit.
Ion implantation in the context of Semiconductor device fabrication
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as microprocessors, microcontrollers, and memories (such as RAM and flash memory). It is a multiple-step photolithographic and physico-chemical process (with steps such as thermal oxidation, thin-film deposition, ion implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. Steps such as etching and photolithography can be used to manufacture other devices, such as LCD and OLED displays.
The fabrication process is performed in highly specialized semiconductor fabrication plants, also called foundries or "fabs", with the central part being the "clean room". In more advanced semiconductor devices, such as modern 14/10/7 nm nodes, fabrication can take up to 15 weeks, with 11–13 weeks being the industry average. Production in advanced fabrication facilities is completely automated, with automated material handling systems taking care of the transport of wafers from machine to machine.
Ion implantation in the context of Particle accelerator
A particle accelerator is a machine that uses electromagnetic fields to propel charged particles to very high speeds and energies to contain them in well-defined beams. Small accelerators are used for fundamental research in particle physics. Accelerators are also used as synchrotron light sources for the study of condensed matter physics. Smaller particle accelerators are used in a wide variety of applications, including particle therapy for oncological purposes, radioisotope production for medical diagnostics, ion implanters for the manufacturing of semiconductors, and accelerator mass spectrometers for measurements of rare isotopes such as radiocarbon.
Large accelerators include the Relativistic Heavy Ion Collider at Brookhaven National Laboratory in New York, and the largest accelerator, the Large Hadron Collider near Geneva, Switzerland, operated by CERN. It is a collider accelerator, which can accelerate two beams of protons to an energy of 6.5 TeV and cause them to collide head-on, creating center-of-mass energies of 13 TeV. There are more than 30,000 accelerators in operation around the world.
Ion implantation in the context of X-ray photoelectron spectroscopy
X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique that measures the very topmost 50–60 atoms, 5–10 nm of any surface. It belongs to the family of photoemission spectroscopies in which electron population spectra are obtained by irradiating a material with a beam of X-rays. XPS is based on the photoelectric effect that can identify the elements that exist within a material (elemental composition) or are covering its surface, as well as their chemical state, and the overall electronic structure and density of the electronic states in the material. XPS is a powerful measurement technique because it not only shows what elements are present, but also what other elements they are bonded to. The technique can be used in line profiling of the elemental composition across the surface, or in depth profiling when paired with ion-beam etching. It is often applied to study chemical processes in the materials in their as-received state or after cleavage, scraping, exposure to heat, reactive gasses or solutions, ultraviolet light, or during ion implantation.
Chemical states are inferred from the measurement of the kinetic energy and the number of the ejected electrons. XPS requires high vacuum (residual gas pressure p ~ 10 Pa) or ultra-high vacuum (p < 10 Pa) conditions, although a current area of development is ambient-pressure XPS, in which samples are analyzed at pressures of a few tens of millibar.