Solid-state physics in the context of Quantum sensor

The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by μ or E_Ffor brevity. The Fermi level does not include the work required to remove the electron from wherever it came from.A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties; how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics.

In band structure theory, used in solid state physics to analyze the energy levels in a solid, the Fermi level can be considered to be a hypothetical energy level of an electron, such that at thermodynamic equilibrium this energy level would have a 50% probability of being occupied at any given time.The position of the Fermi level in relation to the band energy levels is a crucial factor in determining electrical properties.The Fermi level does not necessarily correspond to an actual energy level (in an insulator the Fermi level lies in the band gap), nor does it require the existence of a band structure.Nonetheless, the Fermi level is a precisely defined thermodynamic quantity, and differences in Fermi level can be measured simply with a voltmeter.

Solid-state chemistry, also sometimes referred as materials chemistry, is the study of the synthesis, structure, and properties of solid phase materials. It therefore has a strong overlap with solid-state physics, mineralogy, crystallography, ceramics, metallurgy, thermodynamics, materials science and electronics with a focus on the synthesis of novel materials and their characterization. A diverse range of synthetic techniques, such as the ceramic method and chemical vapour depostion, make solid-state materials. Solids can be classified as crystalline or amorphous on basis of the nature of order present in the arrangement of their constituent particles. Their elemental compositions, microstructures, and physical properties can be characterized through a variety of analytical methods.

SLAC National Accelerator Laboratory, originally named the Stanford Linear Accelerator Center, is a federally funded research and development center in Menlo Park, California, United States. Founded in 1962, the laboratory is now sponsored by the United States Department of Energy and administrated by Stanford University. It is the site of the Stanford Linear Accelerator, a 3.2 km (2 mi) linear accelerator constructed in 1966 that could accelerate electrons to energies of 50 GeV.

Today SLAC research centers on a broad program in atomic and solid-state physics, chemistry, biology, and medicine using X-rays from synchrotron radiation and a free-electron laser as well as experimental and theoretical research in elementary particle physics, accelerator physics, astroparticle physics, and cosmology. The laboratory is under the programmatic direction of the United States Department of Energy Office of Science.

In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote an electron from the valence band to the conduction band. The resulting conduction-band electron (and the electron hole in the valence band) are free to move within the crystal lattice and serve as charge carriers to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from the valence band (mostly full) to the conduction band (mostly empty), then current can flow (see carrier generation and recombination). Therefore, the band gap is a major factor determining the electrical conductivity of a solid. Substances having large band gaps (also called "wide" band gaps) are generally insulators, those with small band gaps (also called "narrow" band gaps) are semiconductors, and conductors either have very small band gaps or none, because the valence and conduction bands overlap to form a continuous band.

It is possible to produce laser induced insulator-metal transitions which have already been experimentally observed in some condensed matter systems, like thin films of C₆₀, doped manganites, or in vanadium sesquioxide V₂O₃. These are special cases of the more general metal-to-nonmetal transitions phenomena which were intensively studied in the last decades. A one-dimensional analytic model of laser induced distortion of band structure was presented for a spatially periodic (cosine) potential. This problem is periodic both in space and time and can be solved analytically using the Kramers-Henneberger co-moving frame. The solutions can be given with the help of the Mathieu functions.

In surface science, surface energy (also interfacial free energy or surface free energy) quantifies the disruption of intermolecular bonds that occurs when a surface is created. In solid-state physics, surfaces must be intrinsically less energetically favorable than the bulk of the material (that is, the atoms on the surface must have more energy than the atoms in the bulk), otherwise there would be a driving force for surfaces to be created, removing the bulk of the material by sublimation. The surface energy may therefore be defined as the excess energy at the surface of a material compared to the bulk, or it is the work required to build an area of a particular surface. Another way to view the surface energy is to relate it to the work required to cut a bulk sample, creating two surfaces. There is "excess energy" as a result of the now-incomplete, unrealized bonding between the two created surfaces.

Cutting a solid body into pieces disrupts its bonds and increases the surface area, and therefore increases surface energy. If the cutting is done reversibly, then conservation of energy means that the energy consumed by the cutting process will be equal to the energy inherent in the two new surfaces created. The unit surface energy of a material would therefore be half of its energy of cohesion, all other things being equal; in practice, this is true only for a surface freshly prepared in vacuum. Surfaces often change their form away from the simple "cleaved bond" model just implied above. They are found to be highly dynamic regions, which readily rearrange or react, so that energy is often reduced by such processes as passivation or adsorption.

In solid-state physics, an energy gap or band gap is an energy range in a solid where no electron states exist, i.e. an energy range where the density of states vanishes.

Especially in condensed matter physics, an energy gap is often known more abstractly as a spectral gap, a term which need not be specific to electrons or solids.

In electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation. Because of dielectric polarisation, positive charges are displaced in the direction of the field and negative charges shift in the direction opposite to the field. This creates an internal electric field that reduces the overall field within the dielectric itself. If a dielectric is composed of weakly bonded molecules, those molecules not only become polarised, but also reorient so that their symmetry axes align to the field.

The study of dielectric properties concerns storage and dissipation of electric and magnetic energy in materials. Dielectrics are important for explaining various phenomena in electronics, optics, solid-state physics and cell biophysics.

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands).

Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules. Band theory has been successfully used to explain many physical properties of solids, such as electrical resistivity and optical absorption, and forms the foundation of the understanding of all solid-state devices (transistors, solar cells, etc.).

Max Born (German: [ˈmaks ˈbɔʁn] ; 11 December 1882 – 5 January 1970) was a German–British theoretical physicist who was instrumental in the development of quantum mechanics. He also made contributions to solid-state physics and optics, and supervised the work of a number of notable physicists in the 1920s and 1930s. He shared the 1954 Nobel Prize in Physics with Walther Bothe "for his fundamental research in quantum mechanics, especially in the statistical interpretation of the wave function."

Born entered the University of Göttingen in 1904, where he met the three renowned mathematicians Felix Klein, David Hilbert, and Hermann Minkowski. He wrote his Ph.D. thesis on the subject of the stability of elastic wires and tapes, winning the university's Philosophy Faculty Prize. In 1905, he began researching special relativity with Minkowski, and subsequently wrote his habilitation thesis on the Thomson model of the atom. A chance meeting with Fritz Haber in Berlin in 1918 led to discussion of how an ionic compound is formed when a metal reacts with a halogen, which is now known as the Born–Haber cycle.

Electronic engineering is a sub-discipline of electrical engineering that emerged in the early 20th century and is distinguished by the additional use of active components such as semiconductor devices to amplify and control electric current flow. Previously electrical engineering only used passive devices such as mechanical switches, resistors, inductors, and capacitors.

It covers fields such as analog electronics, digital electronics, consumer electronics, embedded systems and power electronics. It is also involved in many related fields, for example solid-state physics, radio engineering, telecommunications, control systems, signal processing, systems engineering, computer engineering, instrumentation engineering, electric power control, photonics and robotics.

In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a semiconducting material, the valence band is located below the Fermi level, while the conduction band is located above it.

The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands.

In solid-state physics, the free electron model is a quantum mechanical model for the behaviour of charge carriers in a metallic solid. It was developed in 1927, principally by Arnold Sommerfeld, who combined the classical Drude model with quantum mechanical Fermi–Dirac statistics and hence it is also known as the Drude–Sommerfeld model.

Given its simplicity, it is surprisingly successful in explaining many experimental phenomena, especially

In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.

The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition. Slow recombination rates (or equivalently, long carrier lifetimes) are a favorable attribute of the semiconductors that comprise solar cells.