Gallium arsenide in the context of Electronic circuits

Arsenic is a chemical element; it has symbol As and atomic number 33. It is a metalloid and one of the pnictogens, and therefore shares many properties with its group 15 neighbors phosphorus and antimony. Arsenic is notoriously toxic. It occurs naturally in many minerals, usually in combination with sulfur and metals, but also as a pure elemental crystal. It has various allotropes, but only the grey form, which has a metallic appearance, is important to industry.

The primary use of arsenic is in alloys of lead (for example, in car batteries and ammunition). Arsenic is also a common n-type dopant in semiconductor electronic devices, and a component of the III–V compound semiconductor gallium arsenide. Arsenic and its compounds, especially the trioxide, are used in the production of pesticides, treated wood products, herbicides, and insecticides. These applications are declining with the increasing recognition of the persistent toxicity of arsenic and its compounds.

A semiconductor is a material with electrical conductivity between that of a conductor and an insulator. Its conductivity can be modified by adding impurities ("doping") to its crystal structure. When two regions with different doping levels are present in the same crystal, they form a semiconductor junction. However the term "semiconductors" is sometimes used to refer to semiconductor devices such as microchips and computer processors, which work using the physical properties of semiconductors.

The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common semiconductor and is used in laser diodes, solar cells, microwave-frequency integrated circuits, and others. Silicon is a critical element for fabricating most electronic circuits.

An electronic circuit is composed of individual electronic components, such as resistors, transistors, capacitors, inductors and diodes, connected by conductive wires or traces through which electric current can flow. It is a type of electrical circuit. For a circuit to be referred to as electronic, rather than electrical, generally at least one active component must be present. The combination of components and wires allows various simple and complex operations to be performed: signals can be amplified, computations can be performed, and data can be moved from one place to another.

Circuits can be constructed of discrete components connected by individual pieces of wire, but today it is much more common to create interconnections by photolithographic techniques on a laminated substrate (a printed circuit board or PCB) and solder the components to these interconnections to create a finished circuit. In an integrated circuit or IC, the components and interconnections are formed on the same substrate, typically a semiconductor such as doped silicon or (less commonly) gallium arsenide.

A diode is a two-terminal electronic component that conducts electric current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction and high (ideally infinite) resistance in the other.

A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also used.

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

Semiconductor devices are manufactured both as single discrete devices and as integrated circuits, which consist of two or more devices—which can number from the hundreds to the billions—manufactured and interconnected on a single semiconductor wafer (also called a substrate).

In the context of integrated circuits, a die is a small block of semiconducting material on which a given functional circuit is fabricated. Typically, integrated circuits are produced in large batches on a single wafer of electronic-grade silicon (EGS) or other semiconductor (such as GaAs) through processes such as photolithography. The wafer is cut (diced) into many pieces, each containing one copy of the circuit. Each of these pieces is called a die.

There are three commonly used plural forms: dice, dies, and die. To simplify handling and integration onto a printed circuit board, most dies are packaged in various forms.

Thin-film solar cells are a type of solar cell made by depositing one or more thin layers (thin films or TFs) of photovoltaic material onto a substrate, such as glass, plastic or metal. Thin-film solar cells are typically a few nanometers (nm) to a few microns (μm) thick–much thinner than the wafers used in conventional crystalline silicon (c-Si) based solar cells, which can be up to 200 μm thick. Thin-film solar cells are commercially used in several technologies, including cadmium telluride (CdTe), copper indium gallium diselenide (CIGS), and amorphous thin-film silicon (a-Si, TF-Si).

Solar cells are often classified into so-called generations based on the active (sunlight-absorbing) layers used to produce them, with the most well-established or first-generation solar cells being made of single- or multi-crystalline silicon. This is the dominant technology currently used in most solar PV systems. Most thin-film solar cells are classified as second generation, made using thin layers of well-studied materials like amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established materials are classified as third-generation or emerging solar cells. This includes some innovative thin-film technologies, such as perovskite, dye-sensitized, quantum dot, organic, and CZTS thin-film solar cells.

The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals (monocrystals) of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The method is named after Polish scientist Jan Czochralski, who invented the method in 1915 while investigating the crystallization rates of metals. He made this discovery by accident: instead of dipping his pen into his inkwell, he dipped it in molten tin, and drew a tin filament, which later proved to be a single crystal. The process remains economically important, as roughly 90% of all modern-day semiconductor devices use material derived from this method.

The most important application may be the growth of large cylindrical ingots, or boules, of single crystal silicon used in the electronics industry to make semiconductor devices like integrated circuits. Other semiconductors, such as gallium arsenide, can also be grown by this method, although lower defect densities in this case can be obtained using variants of the Bridgman–Stockbarger method. Other semiconductors such as Silicon Carbide are grown using other methods such as physical vapor transport.