Monocrystalline silicon in the context of "Die (integrated circuit)"

Crystalline silicon or (c-Si) is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are assembled into solar panels as part of a photovoltaic system to generate solar power from sunlight.

In electronics, crystalline silicon is typically the monocrystalline form of silicon, and is used for producing microchips. This silicon contains much lower impurity levels than those required for solar cells. Production of semiconductor grade silicon involves a chemical purification to produce hyper-pure polysilicon, followed by a recrystallization process to grow monocrystalline silicon. The cylindrical boules are then cut into wafers for further processing.

Thin-film solar cells are a type of solar cell made by depositing one or more thin layers (thin films or TFs) of photovoltaic material onto a substrate, such as glass, plastic or metal. Thin-film solar cells are typically a few nanometers (nm) to a few microns (μm) thick–much thinner than the wafers used in conventional crystalline silicon (c-Si) based solar cells, which can be up to 200 μm thick. Thin-film solar cells are commercially used in several technologies, including cadmium telluride (CdTe), copper indium gallium diselenide (CIGS), and amorphous thin-film silicon (a-Si, TF-Si).

Solar cells are often classified into so-called generations based on the active (sunlight-absorbing) layers used to produce them, with the most well-established or first-generation solar cells being made of single- or multi-crystalline silicon. This is the dominant technology currently used in most solar PV systems. Most thin-film solar cells are classified as second generation, made using thin layers of well-studied materials like amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium gallium selenide (CIGS), or gallium arsenide (GaAs). Solar cells made with newer, less established materials are classified as third-generation or emerging solar cells. This includes some innovative thin-film technologies, such as perovskite, dye-sensitized, quantum dot, organic, and CZTS thin-film solar cells.

A boule is a single-crystal ingot produced by synthetic means.

A boule of silicon is the starting material for most of the integrated circuits used today. In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique and the Czochralski process, which result in a cylindrical rod of material.

Electron backscatter diffraction (EBSD) is a scanning electron microscopy (SEM) technique used to study the crystallographic structure of materials. EBSD is carried out in a scanning electron microscope equipped with an EBSD detector comprising at least a phosphorescent screen, a compact lens and a low-light camera. In the microscope an incident beam of electrons hits a tilted sample. As backscattered electrons leave the sample, they interact with the atoms and are both elastically diffracted and lose energy, leaving the sample at various scattering angles before reaching the phosphor screen forming Kikuchi patterns (EBSPs). The EBSD spatial resolution depends on many factors, including the nature of the material under study and the sample preparation. They can be indexed to provide information about the material's grain structure, grain orientation, and phase at the micro-scale. EBSD is used for impurities and defect studies, plastic deformation, and statistical analysis for average misorientation, grain size, and crystallographic texture. EBSD can also be combined with energy-dispersive X-ray spectroscopy (EDS), cathodoluminescence (CL), and wavelength-dispersive X-ray spectroscopy (WDS) for advanced phase identification and materials discovery.

The change and sharpness of the electron backscatter patterns (EBSPs) provide information about lattice distortion in the diffracting volume. Pattern sharpness can be used to assess the level of plasticity. Changes in the EBSP zone axis position can be used to measure the residual stress and small lattice rotations. EBSD can also provide information about the density of geometrically necessary dislocations (GNDs). However, the lattice distortion is measured relative to a reference pattern (EBSP₀). The choice of reference pattern affects the measurement precision; e.g., a reference pattern deformed in tension will directly reduce the tensile strain magnitude derived from a high-resolution map while indirectly influencing the magnitude of other components and the spatial distribution of strain. Furthermore, the choice of EBSP₀ slightly affects the GND density distribution and magnitude.

The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals (monocrystals) of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The method is named after Polish scientist Jan Czochralski, who invented the method in 1915 while investigating the crystallization rates of metals. He made this discovery by accident: instead of dipping his pen into his inkwell, he dipped it in molten tin, and drew a tin filament, which later proved to be a single crystal. The process remains economically important, as roughly 90% of all modern-day semiconductor devices use material derived from this method.

The most important application may be the growth of large cylindrical ingots, or boules, of single crystal silicon used in the electronics industry to make semiconductor devices like integrated circuits. Other semiconductors, such as gallium arsenide, can also be grown by this method, although lower defect densities in this case can be obtained using variants of the Bridgman–Stockbarger method. Other semiconductors such as Silicon Carbide are grown using other methods such as physical vapor transport.