Strain (materials science) in the context of "Silicon–germanium"


Strain (materials science) in the context of "Silicon–germanium"

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⭐ Core Definition: Strain (materials science)

Strain has dimension of a length ratio, with SI base units of meter per meter (m/m).Hence strains are dimensionless and are usually expressed as a decimal fraction or a percentage.Parts-per notation is also used, e.g., parts per million or parts per billion (sometimes called "microstrains" and "nanostrains", respectively), corresponding to μm/m and nm/m.

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👉 Strain (materials science) in the context of Silicon–germanium

SiGe (/ˈsɪɡ/ or /ˈs/), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. SiGe is also used as a thermoelectric material for high-temperature applications (>700 K).

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