Static random-access memory in the context of Register (computer)

A processor register is a quickly accessible location available to a computer's processor. Registers usually consist of a small amount of fast storage, although some registers have specific hardware functions, and may be read-only or write-only. In computer architecture, registers are typically addressed by mechanisms other than main memory, but may in some cases be assigned a memory address e.g. DEC PDP-10, ICT 1900.

Almost all computers, whether load/store architecture or not, load items of data from a larger memory into registers where they are used for arithmetic operations, bitwise operations, and other operations, and are manipulated or tested by machine instructions. Manipulated items are then often stored back to main memory, either by the same instruction or by a subsequent one. Modern processors use either static or dynamic random-access memory (RAM) as main memory, with the latter usually accessed via one or more cache levels.

Random-access memory (RAM; /ræm/) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks and magnetic tape), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.

In modern technology, random-access memory takes the form of integrated circuit (IC) chips with MOS (metal–oxide–semiconductor) memory cells. RAM is normally associated with volatile types of memory where stored information is lost if power is removed. The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM).

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell.

While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.

A CPU cache is a hardware cache used by the central processing unit (CPU) of the computer to reduce an average cost (time or energy) to the access data from a main memory. A cache is a smaller, faster memory, located closer to a processor core, which stores copies of the data from frequently used main memory locations, avoiding the need to always refer to main memory which may be tens to hundreds of times slower to access.

Cache memory is typically implemented with static random-access memory (SRAM), which requires multiple transistors to store a single bit. This makes it expensive in terms of the area it takes up, and in modern CPUs the cache is typically the largest part by chip area. The size of the cache needs to be balanced with the general desire for smaller chips which cost less. Some modern designs implement some or all of their cache using the physically smaller eDRAM, which is slower to use than SRAM but allows larger amounts of cache for any given amount of chip area.

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell. A DRAM memory cell usually consists of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention, the data on the capacitor would soon be lost. To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which does not require data to be refreshed. Unlike flash memory, DRAM is volatile memory (as opposed to non-volatile memory), since it loses its data quickly when power is removed. However, DRAM does exhibit limited data remanence.