P–n junction in the context of Thermionic diode

A diode is a two-terminal electronic component that conducts electric current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction and high (ideally infinite) resistance in the other.

A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also used.

A laser diode (LD, also injection laser diode or ILD or semiconductor laser or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction.

Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation is generated in the form of an emitted photon. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generates light with the same phase, coherence, and wavelength.

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching.

BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along with other components, are elements of integrated circuits for analog and digital functions. Hundreds of bipolar junction transistors can be made in one circuit at a very low cost.

An electrical junction is a point or area where (a) two or more conductors or (b) different semiconducting regions of differing electrical properties make physical contact. Electrical junctions types include thermoelectricity junctions, metal–semiconductor junctions and p–n junctions. Junctions are either rectifying or non-rectifying. Non-rectifying junctions comprise ohmic contacts, which are characterised by a linear current–voltage (${\displaystyle I-V}$) relation. Electronic components employing rectifying junctions include p–n diodes, Schottky diodes and bipolar junction transistors.

Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium. It is mainly used as the semiconducting material in cadmium telluride photovoltaics and an infrared optical window. It is usually sandwiched with cadmium sulfide to form a p–n junction solar PV cell.

A bilayer is a double layer of closely packed atoms or molecules.

The properties of bilayers are often studied in condensed matter physics, particularly in the context of semiconductor devices, where two distinct materials are united to form junctions, such as p–n junctions, Schottky junctions, etc. Layered materials, such as graphene, boron nitride, or transition metal dichalcogenides, have unique electronic properties as bilayer systems and are an active area of current research.

A Zener diode is a type of diode designed to exploit the Zener effect to affect electric current to flow against the normal direction from anode to cathode, when the voltage across its terminals exceeds a certain characteristic threshold, the Zener voltage.

Zener diodes are manufactured with a variety of Zener voltages, including variable devices. Some types have an abrupt, heavily doped p–n junction with a low Zener voltage, in which case the reverse conduction occurs due to electron quantum tunnelling in the short distance between p and n regions. Diodes with a higher Zener voltage have more lightly doped junctions, causing their mode of operation to involve avalanche breakdown. Both breakdown types are present in Zener diodes with the Zener effect predominating at lower voltages and avalanche breakdown at higher voltages.

A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of radio signals, and emitting and detecting light.

Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials. Each material's p–n junction will produce electric current in response to different wavelengths of light. The use of multiple semiconducting materials allows the absorbance of a broader range of wavelengths, improving the cell's sunlight to electrical energy conversion efficiency.

Traditional single-junction cells have a maximum theoretical efficiency of 33.16%. Theoretically, an infinite number of junctions would have a limiting efficiency of 86.8% under highly concentrated sunlight.