MOSFET in the context of Transistors

An image sensor or imager is a device that detects and conveys information used to form an image. It does so by converting the variable attenuation of light waves (as they pass through or reflect off objects) into signals, small bursts of current that convey the information. The waves can be light or other electromagnetic radiation. Image sensors are used in electronic imaging devices of both analog and digital types, which include digital cameras, camera modules, camera phones, optical mouse devices, medical imaging equipment, night vision equipment such as thermal imaging devices, radar, sonar, and others. As technology changes, electronic and digital imaging tends to replace chemical and analog imaging.

The two main types of electronic image sensors are the charge-coupled device (CCD) and the active-pixel sensor (CMOS sensor). Both CCD and CMOS sensors are based on metal–oxide–semiconductor (MOS) technology, with CCDs based on MOS capacitors and CMOS sensors based on MOSFET (MOS field-effect transistor) amplifiers. Analog sensors for invisible radiation tend to involve vacuum tubes of various kinds, while digital sensors include flat-panel detectors.

A smartphone is a mobile device that combines the functionality of a traditional mobile phone with advanced computing capabilities. It typically has a touchscreen interface, allowing users to access a wide range of applications and services, such as web browsing, email, and social media, as well as multimedia playback and streaming. Smartphones have built-in cameras, GPS navigation, and support for various communication methods, including voice calls, text messaging, and internet-based messaging apps. Smartphones are distinguished from older-design feature phones by their more advanced hardware capabilities and extensive mobile operating systems, access to the internet, business applications, mobile payments, and multimedia functionality, including music, video, gaming, radio, and television.

Smartphones typically feature metal–oxide–semiconductor (MOS) integrated circuit (IC) chips, various sensors, and support for multiple wireless communication protocols. Examples of smartphone sensors include accelerometers, barometers, gyroscopes, and magnetometers; they can be used by both pre-installed and third-party software to enhance functionality. Wireless communication standards supported by smartphones include Wi-Fi, Bluetooth, Hotspots and satellite navigation. By the mid-2020s, manufacturers began integrating satellite messaging and emergency services, expanding their utility in remote areas without reliable cellular coverage. Smartphones have largely replaced personal digital assistant (PDA) devices, handheld/palm-sized PCs, portable media players (PMP), point-and-shoot cameras, camcorders, and, to a lesser extent, handheld video game consoles, e-reader devices, pocket calculators, and GPS tracking units.

An active-pixel sensor (APS) is an image sensor where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor. CMOS sensors are used in digital camera technologies such as cell phone cameras, web cameras, most modern digital pocket cameras, most digital single-lens reflex cameras (DSLRs), mirrorless interchangeable-lens cameras (MILCs), and lensless imaging for, e.g., blood cells.

CMOS sensors emerged as an alternative to charge-coupled device (CCD) image sensors and eventually outsold them by the mid-2000s.

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", /siːmɑːs/, /-ɒs/) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS overtook NMOS logic as the dominant MOSFET fabrication process for very large-scale integration (VLSI) chips in the 1980s, replacing earlier transistor–transistor logic (TTL) technology at the same time. CMOS has since remained the standard fabrication process for MOSFET semiconductor devices. As of 2011, 99% of IC chips, including most digital, analog and mixed-signal ICs, were fabricated using CMOS technology.

In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semiconductor's Frank Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. RCA commercialized the technology with the trademark "COS-MOS" in the late 1960s, forcing other manufacturers to find another name, leading to "CMOS" becoming the standard name for the technology by the early 1970s. Two important characteristics of CMOS devices are high noise immunity and low static power consumption. Since one transistor of the MOSFET pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, like NMOS logic or transistor–transistor logic (TTL), which normally have some standing current even when not changing state. These characteristics allow CMOS to integrate a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most widely used technology to be implemented in VLSI chips.

A smartphone is a mobile device that combines the functionality of a traditional mobile phone with advanced computing capabilities. It typically has a touchscreen interface, allowing users to access a wide range of applications and services, such as web browsing, email, and social media, as well as multimedia playback and streaming. Smartphones have built-in cameras, GPS navigation, and support for various communication methods, including voice calls, text messaging, and internet-based messaging apps. Smartphones are distinguished from older-design feature phones by their more advanced hardware capabilities and extensive mobile operating systems, access to the internet, business applications, mobile payments, and multimedia functionality, including music, video, gaming, radio, and television.

Smartphones typically feature metal–oxide–semiconductor (MOS) integrated circuit (IC) chips, various sensors, and support for multiple wireless communication protocols. Examples of smartphone sensors include accelerometers, barometers, gyroscopes, and magnetometers; they can be used by both pre-installed and third-party software to enhance functionality. Wireless communication standards supported by smartphones include LTE, 5G NR, Wi-Fi, Bluetooth, and satellite navigation. By the mid-2020s, manufacturers began integrating satellite messaging and emergency services, expanding their utility in remote areas without reliable cellular coverage. Smartphones have largely replaced personal digital assistant (PDA) devices, handheld/palm-sized PCs, portable media players (PMP), point-and-shoot cameras, camcorders, and, to a lesser extent, handheld video game consoles, e-reader devices, pocket calculators, and GPS tracking units.

A logic gate is a device that performs a Boolean function, a logical operation performed on one or more binary inputs that produces a single binary output. Depending on the context, the term may refer to an ideal logic gate, one that has, for instance, zero rise time and unlimited fan-out, or it may refer to a non-ideal physical device (see ideal and real op-amps for comparison).

The primary way of building logic gates uses diodes or transistors acting as electronic switches. Today, most logic gates are made from MOSFETs (metal–oxide–semiconductor field-effect transistors). They can also be constructed using vacuum tubes, electromagnetic relays with relay logic, fluidic logic, pneumatic logic, optics, molecules, acoustics, or even mechanical or thermal elements.

Surface-mount technology (SMT), originally called planar mounting, is a method in which the electrical components are mounted directly onto the surface of a printed circuit board (PCB). An electrical component mounted in this manner is referred to as a surface-mount device (SMD). In industry, this approach has largely replaced through-hole technology construction method of fitting components, in large part because SMT allows for increased manufacturing automation which reduces cost and improves quality. It also allows for more components to fit on a given area of substrate. Both technologies can be used on the same board, with the through-hole technology often used for components not suitable for surface mounting such as large transformers and heat-sinked power semiconductors.

An SMT component is usually smaller than its through-hole counterpart because it has either smaller leads or no leads at all. It may have short pins or leads of various styles, flat contacts, a matrix of solder balls (BGAs), or terminations on the body of the component.

Complementary metal–oxide–semiconductor (CMOS /ˈsiːmɒs/ SEE-mos) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips, and other digital logic circuits. CMOS overtook NMOS logic as the dominant MOSFET fabrication process for very large-scale integration (VLSI) chips in the 1980s, replacing earlier transistor–transistor logic (TTL) technology at the same time. CMOS has since remained the standard fabrication process for MOSFET semiconductor devices. As of 2011, 99% of IC chips, including most digital, analog and mixed-signal ICs, were fabricated using CMOS technology.

In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semiconductor's Frank Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. RCA commercialized the technology with the trademark "COS-MOS" in the late 1960s, forcing other manufacturers to find another name, leading to "CMOS" becoming the standard name for the technology by the early 1970s. Two important characteristics of CMOS devices are high noise immunity and low static power consumption. Since one transistor of the MOSFET pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, like NMOS logic or transistor–transistor logic (TTL), which normally have some standing current even when not changing state. These characteristics allow CMOS to integrate a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most widely used technology to be implemented in VLSI chips.

NMOS or nMOS logic (from N-type metal–oxide–semiconductor) uses n-type (-) MOSFETs (metal–oxide–semiconductor field-effect transistors) to implement logic gates and other digital circuits.

NMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type source and drain terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation.

Frank Marion Wanlass (May 17, 1933, in Thatcher, AZ – September 9, 2010, in Santa Clara, California) was an American electrical engineer. He is best known for inventing, along with Chih-Tang Sah, CMOS (complementary MOS) logic in 1963. CMOS has since become the standard semiconductor device fabrication process for MOSFETs (metal–oxide–semiconductor field-effect transistors).

Chih-Tang "Tom" Sah (simplified Chinese: 萨支唐; traditional Chinese: 薩支唐; pinyin: Sà Zhītáng; 10 November 1932 – 5 July 2025) is a Chinese-American electronics engineer and condensed matter physicist. He is best known for inventing CMOS (complementary MOS) logic with Frank Wanlass at Fairchild Semiconductor in 1963. CMOS is used in nearly all modern very large-scale integration (VLSI) semiconductor devices.

He was the Pittman Eminent Scholar and a Graduate Research Professor at the University of Florida from 1988 to 2010. He was a Professor of Physics and Professor of Electrical and Computer Engineering, emeritus, at the University of Illinois at Urbana-Champaign, where he taught for 26 years (1962-1988) and guided 40 students to the Ph.D. degree in electrical engineering and in physics and 34 MSEE theses. At the University of Florida, he guided 10 doctoral theses in EE. He has published more than 300 peer-reviewed journal articles with his graduate students and research associates, and presented about 200 invited lectures and 60 contributed papers in China, Europe, Japan, Taiwan and in the United States on transistor physics, technology and evolution.

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal–oxide–semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source.

FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET.

The transistor count is the number of transistors in an electronic device (typically on a single substrate or silicon die). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observes that transistor count doubles approximately every two years. However, being directly proportional to the area of a die, transistor count does not represent how advanced the corresponding manufacturing technology is. A better indication of this is transistor density which is the ratio of a semiconductor's transistor count to its die area.

Miniaturization (Br.Eng.: miniaturisation) is the trend to manufacture ever-smaller mechanical, optical, and electronic products and devices. Examples include miniaturization of mobile phones, computers and vehicle engine downsizing. In electronics, the exponential scaling and miniaturization of silicon MOSFETs (MOS transistors) leads to the number of transistors on an integrated circuit chip doubling every two years, an observation known as Moore's law. This leads to MOS integrated circuits such as microprocessors and memory chips being built with increasing transistor density, faster performance, and lower power consumption, enabling the miniaturization of electronic devices.