Floating-gate transistor in the context of EEPROM

Floating-gate transistor in the context of EEPROM

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👉 Floating-gate transistor in the context of EEPROM

EEPROM or EPROM (electrically erasable programmable read-only memory) is a type of non-volatile memory. It is used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device, to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.

EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration.

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Floating-gate transistor in the context of EPROM

An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet (UV) light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models, resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. It was invented by Dov Frohman in 1971.

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