EPROM in the context of Flash storage

An electronic circuit is composed of individual electronic components, such as resistors, transistors, capacitors, inductors and diodes, connected by conductive wires or traces through which electric current can flow. It is a type of electrical circuit. For a circuit to be referred to as electronic, rather than electrical, generally at least one active component must be present. The combination of components and wires allows various simple and complex operations to be performed: signals can be amplified, computations can be performed, and data can be moved from one place to another.

Circuits can be constructed of discrete components connected by individual pieces of wire, but today it is much more common to create interconnections by photolithographic techniques on a laminated substrate (a printed circuit board or PCB) and solder the components to these interconnections to create a finished circuit. In an integrated circuit or IC, the components and interconnections are formed on the same substrate, typically a semiconductor such as doped silicon or (less commonly) gallium arsenide.

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level, depending on whether the state of the bit line or word lines is pulled high or low; in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

Flash memory, a type of floating-gate memory, was invented by Fujio Masuoka at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be written – to an erased location – or read independently. A flash memory device typically consists of one or more flash memory chips (each holding many flash memory cells), along with a separate flash memory controller chip.

A microcontroller (MC, uC, or μC) or microcontroller unit (MCU) is a small computer on a single integrated circuit. A microcontroller contains one or more processor cores along with memory and programmable input/output peripherals. Program memory in the form of NOR flash, OTP ROM, or ferroelectric RAM is also often included on the chip, as well as a small amount of RAM. Microcontrollers are designed for embedded applications, in contrast to the microprocessors used in personal computers or other general-purpose applications consisting of various discrete chips.

In modern terminology, a microcontroller is similar to, but less sophisticated than, a system on a chip (SoC). A SoC may include a microcontroller as one of its components but usually integrates it with advanced peripherals like a graphics processing unit (GPU), a Wi-Fi module, or one or more coprocessors.

Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell.

Most types of semiconductor memory have the property of random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. This contrasts with data storage media such as CDs which read and write data consecutively and therefore the data can only be accessed in the same sequence it was written. Semiconductor memory also has much faster access times than other types of data storage; a byte of data can be written to or read from semiconductor memory within a few nanoseconds, while access time for rotating storage such as hard disks is in the range of milliseconds. For these reasons it is used for primary storage, to hold the program and data the computer is currently working on, among other uses.

The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling or hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.

The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, digital potentiometers and single-transistor DACs.

EEPROM or EPROM (electrically erasable programmable read-only memory) is a type of non-volatile memory. It is used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device, to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed.

EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration.

In microelectronics, a dual in-line package (DIP or DIL) is an electronic component package with a rectangular housing and two parallel rows of electrical connecting pins. The package may be through-hole mounted to a printed circuit board (PCB) or inserted in a socket. The dual-inline format was invented by Don Forbes, Rex Rice and Bryant Rogers at Fairchild R&D in 1964, when the restricted number of leads available on circular transistor-style packages became a limitation in the use of integrated circuits. Increasingly complex circuits required more signal and power supply leads (as observed in Rent's rule); eventually microprocessors and similar complex devices required more leads than could be put on a DIP package, leading to development of higher-density chip carriers. Furthermore, square and rectangular packages made it easier to route printed-circuit traces beneath the packages.

A DIP is usually referred to as a DIPn, where n is the total number of pins, and sometimes appended with the row-to-row package width "N" for narrow (0.3") or "W" for wide (0.6"). For example, a microcircuit package with two rows of seven vertical leads would be a DIP14 or DIP14N. The photograph at the upper right shows three DIP14 ICs. Common packages have as few as four and as many as 64 leads. Many analog and digital integrated circuit types are available in DIP packages, as are arrays of transistors, switches, light emitting diodes, and resistors. DIP plugs for ribbon cables can be used with standard IC sockets.