Crystallographic defect in the context of "Solid solution"

In materials science, a single crystal (or single-crystal solid or monocrystalline solid) is a material in which the crystal lattice of the entire sample is continuous and unbroken to the edges of the sample, with no grain boundaries. The absence of the defects associated with grain boundaries can give monocrystals unique properties, particularly mechanical, optical and electrical, which can also be anisotropic, depending on the type of crystallographic structure. These properties, in addition to making some gems precious, are industrially used in technological applications, especially in optics and electronics.

Because entropic effects favor the presence of some imperfections in the microstructure of solids, such as impurities, inhomogeneous strain and crystallographic defects such as dislocations, perfect single crystals of meaningful size are exceedingly rare in nature. The necessary laboratory conditions often add to the cost of production. On the other hand, imperfect single crystals can reach enormous sizes in nature: several mineral species such as beryl, gypsum and feldspars are known to have produced crystals several meters across.

Non-stoichiometric compounds are chemical compounds, almost always solid inorganic compounds, having elemental composition whose proportions cannot be represented by a ratio of small natural numbers (i.e. an empirical formula); most often, in such materials, some small percentage of atoms are missing or too many atoms are packed into an otherwise perfect lattice work.

Contrary to earlier definitions, modern understanding of non-stoichiometric compounds view them as homogeneous, and not mixtures of stoichiometric chemical compounds. Since the solids are overall electrically neutral, the defect is compensated by a change in the charge of other atoms in the solid, either by changing their oxidation state, or by replacing them with atoms of different elements with a different charge. Many metal oxides and sulfides have non-stoichiometric examples; for example, stoichiometric iron(II) oxide, which is rare, has the formula FeO, whereas the more common material is nonstoichiometric, with the formula Fe_0.95O. The type of equilibrium defects in non-stoichiometric compounds can vary with attendant variation in bulk properties of the material. Non-stoichiometric compounds also exhibit special electrical or chemical properties because of the defects; for example, when atoms are missing, electrons can move through the solid more rapidly. Non-stoichiometric compounds have applications in ceramic and superconductive material and in electrochemical (i.e., battery) system designs.

In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allows atoms to slide over each other at low stress levels and is known as glide or slip. The crystalline order is restored on either side of a glide dislocation but the atoms on one side have moved by one position. The crystalline order is not fully restored with a partial dislocation. A dislocation defines the boundary between slipped and unslipped regions of material and as a result, must either form a complete loop, intersect other dislocations or defects, or extend to the edges of the crystal. A dislocation can be characterised by the distance and direction of movement it causes to atoms which is defined by the Burgers vector. Plastic deformation of a material occurs by the creation and movement of many dislocations. The number and arrangement of dislocations influences many of the properties of materials.

The two primary types of dislocations are sessile dislocations which are immobile and glissile dislocations which are mobile. Examples of sessile dislocations are the stair-rod dislocation and the Lomer–Cottrell junction. The two main types of mobile dislocations are edge and screw dislocations.

In condensed-matter physics, a collision cascade (also known as a displacement cascade or a displacement spike) is a set of nearby adjacent energetic (much higher than ordinary thermal energies) collisions of atoms induced by an energetic particle in a solid or liquid.

If the maximum atom or ion energies in a collision cascade are higher than the threshold displacement energy of the material (tens of eVs or more), the collisions can permanently displace atoms from their lattice sites and produce defects. The initial energetic atom can be, e.g., an ion from a particle accelerator, an atomic recoil produced by a passing high-energy neutron, electron or photon, or be produced when a radioactive nucleus decays and gives the atom a recoil energy.

An intrinsic semiconductor, also called a pure semiconductor, undoped semiconductor or i-type semiconductor, is a semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. This may be the case even after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped. This means that some conductors are both intrinsic as well as extrinsic but only if n (electron donor dopant/excited electrons) is equal to p (electron acceptor dopant/vacant holes that act as positive charges).

The electrical conductivity of chemically pure semiconductors can still be affected by crystallographic defects of technological origin (like vacancies), some of which can behave similar to dopants. Their effect can often be neglected, though, and the number of electrons in the conduction band is then exactly equal to the number of holes in the valence band. The conduction of current of intrinsic semiconductor is enabled purely by electron excitation across the band-gap, which is usually small at room temperature except for narrow-bandgap semiconductors, like Hg
_0.8Cd
_0.2Te.

Ionic conductivity (denoted by λ) is the movement of ions through a solid material, a phenomenon central to solid-state ionics. It is denoted by λ and measured in siemens per meter (S/m). While perfect crystals of inorganic compounds are typically electrical insulators, ionic conduction arises when defects are introduced—either intrinsically through thermal activation or extrinsically via doping with aliovalent impurities. These defects enable ion migration by providing pathways through the crystal lattice. Solid ionic conductors, known as solid electrolytes, are critical components in technologies such as all-solid-state batteries, supercapacitors, fuel cells, and thin-film microelectronic devices. The ionic conductivity (σ) follows an Arrhenius-type relationship with temperature, governed by activation energy barriers influenced by crystal structure and defect chemistry. Ionic conduction is one mechanism of current.

In materials science, a grain boundary is the interface between two grains, or crystallites, in a polycrystalline material. Grain boundaries are two-dimensional defects in the crystal structure, and tend to decrease the electrical and thermal conductivity of the material. Most grain boundaries are preferred sites for the onset of corrosion and for the precipitation of new phases from the solid. They are also important to many of the mechanisms of creep. On the other hand, grain boundaries disrupt the motion of dislocations through a material, so reducing crystallite size is a common way to improve mechanical strength, as described by the Hall–Petch relationship.