Walter Houser Brattain in the context of "Surface states"

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⭐ Core Definition: Walter Houser Brattain

Walter Houser Brattain (/ˈbrætn/ BRAT-n; February 10, 1902 – October 13, 1987) was an American solid-state physicist who shared the 1956 Nobel Prize in Physics with John Bardeen and William Shockley for their invention of the point-contact transistor. Brattain devoted much of his life to research on surface states.

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Walter Houser Brattain in the context of Semiconductor industry

The semiconductor industry is the aggregate of companies engaged in the design and fabrication of semiconductors and semiconductor devices, such as transistors and integrated circuits. Its roots can be traced to the invention of the transistor by Shockley, Brattain, and Bardeen at Bell Labs in 1948. Bell Labs licensed the technology for $25,000, and soon many companies, including Motorola (1952), Shockley Semiconductor (1955), Sylvania, Centralab, Fairchild Semiconductor and Texas Instruments were making transistors. In 1958 Jack Kilby of Texas Instruments and Robert Noyce of Fairchild independently invented the Integrated Circuit, a method of producing multiple transistors on a single "chip" of Semiconductor material. This kicked off a number of rapid advances in fabrication technology leading to the exponential growth in semiconductor device production, known as Moore's law that has persisted over the past six or so decades. The industry's annual semiconductor sales revenue has since grown to over $481 billion, as of 2018.

In 2010, the semiconductor industry had the highest intensity of Research & Development in the EU and ranked second after Biotechnology in the EU, United States and Japan combined.

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Walter Houser Brattain in the context of Point-contact transistor

The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicist William Shockley. The group had been working together on experiments and theories of electric field effects in solid state materials, with the aim of replacing vacuum tubes with a smaller device that consumed less power.

The critical experiment, carried out on December 16, 1947, consisted of a block of germanium, a semiconductor, with two very closely spaced gold contacts held against it by a spring. Brattain attached a small strip of gold foil over the point of a plastic triangle—a configuration which is essentially a point-contact diode. He then carefully sliced through the gold at the tip of the triangle. This produced two electrically isolated gold contacts very close to each other.

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