Semiconductor manufacturing in the context of Microcontroller

Surface engineering is the sub-discipline of materials science which deals with the surface of solid matter. It has applications to chemistry, mechanical engineering, and electrical engineering (particularly in relation to semiconductor manufacturing).

Solids are composed of a bulk material covered by a surface. The surface which bounds the bulk material is called the surface phase. It acts as an interface to the surrounding environment. The bulk material in a solid is called the bulk phase.

Microfabrication is the process of fabricating miniature structures of micrometre scales and smaller. Historically, the earliest microfabrication processes were used for integrated circuit fabrication, also known as "semiconductor manufacturing" or "semiconductor device fabrication". In the last two decades, microelectromechanical systems (MEMS), microsystems (European usage), micromachines (Japanese terminology) and their subfields have re-used, adapted or extended microfabrication methods. These subfields include microfluidics/lab-on-a-chip, optical MEMS (also called MOEMS), RF MEMS, PowerMEMS, BioMEMS and their extension into nanoscale (for example NEMS, for nano electro mechanical systems). The production of flat-panel displays and solar cells also uses similar techniques.

Miniaturization of various devices presents challenges in many areas of science and engineering: physics, chemistry, materials science, computer science, ultra-precision engineering, fabrication processes, and equipment design. It is also giving rise to various kinds of interdisciplinary research. The major concepts and principles of microfabrication are microlithography, doping, thin films, etching, bonding, and polishing.

In semiconductor manufacturing, the "7 nm" process is a term for the MOSFET technology node following the "10 nm" node, defined by the International Roadmap for Devices and Systems (IRDS), which was preceded by the International Technology Roadmap for Semiconductors (ITRS). It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology.

As of 2021, the IRDS Lithography standard gives a table of dimensions for the "7 nm" node, with examples given below:

Megasonic cleaning is a specialized cleaning method that utilizes high-frequency sound waves to remove contaminants from delicate surfaces. It is particularly effective in industries like semiconductor manufacturing, optics, and medical device production, where precision and gentle cleaning are crucial. It is a type of acoustic cleaning related to ultrasonic cleaning. Similar to ultrasonic cleaning, megasonic cleaning uses a transducer that sits on top of a piezoelectric substrate. The transducer creates acoustic waves at a higher frequency (typically 0.8–2 MHz) than ultrasonic cleaning (20-200 kHz). As a result, the cavitation that occurs is reduced and on a much smaller scale.

National Semiconductor Corporation was an American semiconductor manufacturer, which specialized in analog devices and subsystems, formerly headquartered in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.

On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

In semiconductor manufacturing, isotropic etching is a method commonly used to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma-phase, although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide etching are more often used. Unlike anisotropic etching, isotropic etching does not etch in a single direction, but rather etches in multiple directions within the substrate. Any horizontal component of the etch direction may therefore result in undercutting of patterned areas, and significant changes to device characteristics. Isotropic etching may occur unavoidably, or it may be desirable for process reasons.