Microelectronic in the context of "Gyrator"

In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si, silicium), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells.

The wafer serves as the substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping, ion implantation, etching, thin-film deposition of various materials, and photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and packaged as an integrated circuit.

In physical chemistry and engineering, passivation is coating a material so that it becomes "passive", that is, less readily affected or corroded by the environment. Passivation involves creation of an outer layer of shield material that is applied as a microcoating, created by chemical reaction with the base material, or allowed to build by spontaneous oxidation in the air. As a technique, passivation is the use of a light coat of a protective material, such as metal oxide, to create a shield against corrosion. Passivation of silicon is used during fabrication of microelectronic devices. Undesired passivation of electrodes, called "fouling", increases the circuit resistance so it interferes with some electrochemical applications such as electrocoagulation for wastewater treatment, amperometric chemical sensing, and electrochemical synthesis.

When exposed to air, many metals naturally form a hard, relatively inert surface layer, usually an oxide (termed the "native oxide layer") or a nitride, that serves as a passivation layer - i.e. these metals are "self-protecting". In the case of silver, the dark tarnish is a passivation layer of silver sulfide formed from reaction with environmental hydrogen sulfide. Aluminium similarly forms a stable protective oxide layer which is why it does not "rust". (In contrast, some base metals, notably iron, oxidize readily to form a rough, porous coating of rust that adheres loosely, is of higher volume than the original displaced metal, and sloughs off readily; all of which permit & promote further oxidation.) The passivation layer of oxide markedly slows further oxidation and corrosion in room-temperature air for aluminium, beryllium, chromium, zinc, titanium, and silicon (a metalloid). The inert surface layer formed by reaction with air has a thickness of about 1.5 nm for silicon, 1–10 nm for beryllium, and 1 nm initially for titanium, growing to 25 nm after several years. Similarly, for aluminium, it grows to about 5 nm after several years.