Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM). However, while the SEM uses a focused beam of electrons to image the sample in the chamber, a FIB setup uses a focused beam of ions instead. FIB can also be incorporated in a system with both electron and ion beam columns, allowing the same feature to be investigated using either of the beams. FIB should not be confused with using a beam of focused ions for direct write lithography (such as in proton beam writing). These are generally quite different systems where the material is modified by other mechanisms.
Focused ion beam in the context of Length measurement
Length measurement, distance measurement, or range measurement (ranging) all refer to the many ways in which length, distance, or range can be measured. The most commonly used approaches are the rulers, followed by transit-time methods and the interferometer methods based upon the speed of light. Surveying is one ancient use of measuring long distances.
For tiny objects such as crystals and diffraction gratings, diffraction is used with X-ray light, or even electron beams. Measurement techniques for three-dimensional structures very small in every dimension use specialized instruments such as ion microscopy coupled with intensive computer modeling. These techniques are employed, for example, to measure the tiny features on wafers during the manufacture of chips.
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