Field electron emission in the context of "Work function"

In vacuum tubes and gas-filled tubes, a hot cathode or thermionic cathode is a cathode electrode which is heated to make it emit electrons due to thermionic emission. This is in contrast to a cold cathode, which does not have a heating element. The heating element is usually an electrical filament heated by a separate electric current passing through it. Hot cathodes typically achieve much higher power density than cold cathodes, emitting significantly more electrons from the same surface area. Cold cathodes rely on field electron emission or secondary electron emission from positive ion bombardment, and do not require heating. There are two types of hot cathode. In a directly heated cathode, the filament is the cathode and emits the electrons. In an indirectly heated cathode, the filament or heater heats a separate metal cathode electrode which emits the electrons.

From the 1920s to the 1960s, a wide variety of electronic devices used hot-cathode vacuum tubes. Today, hot cathodes are used as the source of electrons in fluorescent lamps, vacuum tubes, and the electron guns used in cathode-ray tubes and laboratory equipment such as electron microscopes.

Electron backscatter diffraction (EBSD) is a scanning electron microscopy (SEM) technique used to study the crystallographic structure of materials. EBSD is carried out in a scanning electron microscope equipped with an EBSD detector comprising at least a phosphorescent screen, a compact lens and a low-light camera. In the microscope an incident beam of electrons hits a tilted sample. As backscattered electrons leave the sample, they interact with the atoms and are both elastically diffracted and lose energy, leaving the sample at various scattering angles before reaching the phosphor screen forming Kikuchi patterns (EBSPs). The EBSD spatial resolution depends on many factors, including the nature of the material under study and the sample preparation. They can be indexed to provide information about the material's grain structure, grain orientation, and phase at the micro-scale. EBSD is used for impurities and defect studies, plastic deformation, and statistical analysis for average misorientation, grain size, and crystallographic texture. EBSD can also be combined with energy-dispersive X-ray spectroscopy (EDS), cathodoluminescence (CL), and wavelength-dispersive X-ray spectroscopy (WDS) for advanced phase identification and materials discovery.

The change and sharpness of the electron backscatter patterns (EBSPs) provide information about lattice distortion in the diffracting volume. Pattern sharpness can be used to assess the level of plasticity. Changes in the EBSP zone axis position can be used to measure the residual stress and small lattice rotations. EBSD can also provide information about the density of geometrically necessary dislocations (GNDs). However, the lattice distortion is measured relative to a reference pattern (EBSP₀). The choice of reference pattern affects the measurement precision; e.g., a reference pattern deformed in tension will directly reduce the tensile strain magnitude derived from a high-resolution map while indirectly influencing the magnitude of other components and the spatial distribution of strain. Furthermore, the choice of EBSP₀ slightly affects the GND density distribution and magnitude.

A field-emission display (FED) is a flat panel display technology that uses large-area field electron emission sources to provide electrons that strike colored phosphor to produce a color image. In a general sense, an FED consists of a matrix of cathode-ray tubes, each tube producing a single sub-pixel, grouped in threes to form red-green-blue (RGB) pixels. FEDs combine the advantages of CRTs, namely their high contrast levels and very fast response times, with the packaging advantages of LCD and other flat-panel technologies. They also offer the possibility of requiring less power, about half that of an LCD system. FEDs can also be made transparent.

Sony was the major proponent of the FED design and put considerable research and development effort into the system during the 2000s, planning mass production in 2009. Sony's FED efforts started winding down in 2009, as LCD became the dominant flat-panel technology. In January 2010, AU Optronics announced that it acquired essential FED assets from Sony and intends to continue development of the technology. As of 2024, no large-scale commercial FED production has been undertaken.

The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling or hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.

The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, digital potentiometers and single-transistor DACs.