Field-effect transistor in the context of MOS transistor

In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET).

The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, especially compared to bipolar junction transistors (BJTs). However, at high frequencies or when switching rapidly, a MOSFET may require significant current to charge and discharge its gate capacitance. In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity.

A logic gate is a device that performs a Boolean function, a logical operation performed on one or more binary inputs that produces a single binary output. Depending on the context, the term may refer to an ideal logic gate, one that has, for instance, zero rise time and unlimited fan-out, or it may refer to a non-ideal physical device (see ideal and real op-amps for comparison).

The primary way of building logic gates uses diodes or transistors acting as electronic switches. Today, most logic gates are made from MOSFETs (metal–oxide–semiconductor field-effect transistors). They can also be constructed using vacuum tubes, electromagnetic relays with relay logic, fluidic logic, pneumatic logic, optics, molecules, acoustics, or even mechanical or thermal elements.

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions.

Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor (FET) in 1925, but it was not possible to construct a working device at that time. The first working device was a point-contact transistor invented in 1947 by physicists John Bardeen, Walter Brattain, and William Shockley at Bell Labs who shared the 1956 Nobel Prize in Physics for their achievement. The most widely used type of transistor, the metal–oxide–semiconductor field-effect transistor (MOSFET), was invented at Bell Labs between 1955 and 1960. Transistors revolutionized the field of electronics and paved the way for smaller and cheaper radios, calculators, computers, and other electronic devices.

NMOS or nMOS logic (from N-type metal–oxide–semiconductor) uses n-type (-) MOSFETs (metal–oxide–semiconductor field-effect transistors) to implement logic gates and other digital circuits.

NMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type source and drain terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation.

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching.

BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along with other components, are elements of integrated circuits for analog and digital functions. Hundreds of bipolar junction transistors can be made in one circuit at a very low cost.

Julius Edgar Lilienfeld (April 18, 1882 – August 28, 1963) was an Austro-Hungarian, and later American (where he moved in 1921) electrical engineer and physicist who has been credited with the first patent on the field-effect transistor in 1925. He was never able to build a working practical semiconductor device based on his concept. Additionally, because he didn't publish articles in learned journals and since high-purity semiconductor materials were not available to him, his FET patent never achieved fame, causing confusion for later inventors.

In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers diffuse, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena.

A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on a supporting (but non-conducting) substrate, such as glass. This differs from the conventional bulk metal-oxide-semiconductor field-effect transistor (MOSFET), where the semiconductor material typically is the substrate, such as a silicon wafer. The traditional application of TFTs is in TFT liquid-crystal displays.

The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers.

Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between source and drain terminals. By applying a reverse bias voltage to a gate terminal, the channel is pinched, so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals.