Dopant in the context of "Transparency and translucency"

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⭐ Core Definition: Dopant

A dopant (also called a doping agent) is a small amount of a substance added to a material to alter its physical properties, such as electrical or optical properties. The amount of dopant is typically very low compared to the material being doped.

When doped into crystalline substances, the dopant's atoms get incorporated into the crystal lattice of the substance. The crystalline materials are frequently either crystals of a semiconductor such as silicon and germanium for use in solid-state electronics, or transparent crystals for use in the production of various laser types; however, in some cases of the latter, noncrystalline substances such as glass can also be doped with impurities.

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Dopant in the context of Arsenic

Arsenic is a chemical element; it has symbol As and atomic number 33. It is a metalloid and one of the pnictogens, and therefore shares many properties with its group 15 neighbors phosphorus and antimony. Arsenic is notoriously toxic. It occurs naturally in many minerals, usually in combination with sulfur and metals, but also as a pure elemental crystal. It has various allotropes, but only the grey form, which has a metallic appearance, is important to industry.

The primary use of arsenic is in alloys of lead (for example, in car batteries and ammunition). Arsenic is also a common n-type dopant in semiconductor electronic devices, and a component of the III–V compound semiconductor gallium arsenide. Arsenic and its compounds, especially the trioxide, are used in the production of pesticides, treated wood products, herbicides, and insecticides. These applications are declining with the increasing recognition of the persistent toxicity of arsenic and its compounds.

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Dopant in the context of Gallium

Gallium is a chemical element; it has symbol Ga and atomic number 31. Discovered by the French chemist Paul-Émile Lecoq de Boisbaudran in Paris, France, 1875, elemental gallium is a soft, silvery metal at standard temperature and pressure. In its liquid state, it becomes silvery white. If enough force is applied, solid gallium may fracture conchoidally. Since its discovery in 1875, gallium has widely been used to make alloys with low melting points. It is also used in semiconductors, as a dopant in semiconductor substrates.

The melting point of gallium, 29.7646 °C (85.5763 °F; 302.9146 K), is used as a temperature reference point. Gallium alloys are used in thermometers as a non-toxic and environmentally friendly alternative to mercury, and can withstand higher temperatures than mercury. A melting point of −19 °C (−2 °F), well below the freezing point of water, is claimed for the alloy galinstan (62–⁠95% gallium, 5–⁠22% indium, and 0–⁠16% tin by weight), but that may be the freezing point with the effect of supercooling.

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Dopant in the context of P-type semiconductor

An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An electron donor dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor that has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move through the crystal like a positively charged particle. An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are positive holes.

Doping is the key to the extraordinarily wide range of electrical behavior that semiconductors can exhibit, and extrinsic semiconductors are used to make semiconductor electronic devices such as diodes, transistors, integrated circuits, semiconductor lasers, LEDs, and photovoltaic cells. Sophisticated semiconductor fabrication processes like photolithography can implant different dopant elements in different regions of the same semiconductor crystal wafer, creating semiconductor devices on the wafer's surface. For example a common type of transistor, the n-p-n bipolar transistor, consists of an extrinsic semiconductor crystal with two regions of n-type semiconductor, separated by a region of p-type semiconductor, with metal contacts attached to each part.

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Dopant in the context of Intrinsic semiconductor

An intrinsic semiconductor, also called a pure semiconductor, undoped semiconductor or i-type semiconductor, is a semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities. In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. This may be the case even after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped. This means that some conductors are both intrinsic as well as extrinsic but only if n (electron donor dopant/excited electrons) is equal to p (electron acceptor dopant/vacant holes that act as positive charges).

The electrical conductivity of chemically pure semiconductors can still be affected by crystallographic defects of technological origin (like vacancies), some of which can behave similar to dopants. Their effect can often be neglected, though, and the number of electrons in the conduction band is then exactly equal to the number of holes in the valence band. The conduction of current of intrinsic semiconductor is enabled purely by electron excitation across the band-gap, which is usually small at room temperature except for narrow-bandgap semiconductors, like Hg
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Dopant in the context of Ion conductivity

Ionic conductivity (denoted by λ) is the movement of ions through a solid material, a phenomenon central to solid-state ionics. It is denoted by λ and measured in siemens per meter (S/m). While perfect crystals of inorganic compounds are typically electrical insulators, ionic conduction arises when defects are introduced—either intrinsically through thermal activation or extrinsically via doping with aliovalent impurities. These defects enable ion migration by providing pathways through the crystal lattice. Solid ionic conductors, known as solid electrolytes, are critical components in technologies such as all-solid-state batteries, supercapacitors, fuel cells, and thin-film microelectronic devices. The ionic conductivity (σ) follows an Arrhenius-type relationship with temperature, governed by activation energy barriers influenced by crystal structure and defect chemistry. Ionic conduction is one mechanism of current.

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Dopant in the context of Neodymium

Neodymium is a chemical element; it has symbol Nd and atomic number 60. It is the fourth member of the lanthanide series and is considered to be one of the rare-earth metals. It is a hard, slightly malleable, silvery metal that quickly tarnishes in air and moisture. When oxidized, neodymium reacts quickly, producing pink, purple/blue, and yellow compounds in the +2, +3 and +4 oxidation states. It is generally regarded as having one of the most complex spectra of the elements. Neodymium was discovered in 1885 by the Austrian chemist Carl Auer von Welsbach, who also discovered praseodymium. Neodymium is present in significant quantities in the minerals monazite and bastnäsite. Neodymium is not found naturally in metallic form or unmixed with other lanthanides, and it is usually refined for general use. Neodymium is fairly common—about as common as cobalt, nickel, or copper—and is widely distributed in the Earth's crust. Most of the world's commercial neodymium is mined in China, as is the case with many other rare-earth metals.

Neodymium compounds were first commercially used as glass dyes in 1927 and remain a popular additive. The color of neodymium compounds comes from the Nd ion and is often a reddish-purple. This color changes with the type of lighting because of the interaction of the sharp light absorption bands of neodymium with ambient light enriched with the sharp visible emission bands of mercury, trivalent europium or terbium. Glasses that have been doped with neodymium are used in lasers that emit infrared with wavelengths between 1047 and 1062 nanometers. These lasers have been used in extremely high-power applications, such as in inertial confinement fusion. Neodymium is also used with various other substrate crystals, such as yttrium aluminium garnet in the Nd:YAG laser.

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Dopant in the context of Thulium

Thulium is a chemical element; it has symbol Tm and atomic number 69. It is the thirteenth element in the lanthanide series of metals. It is the second-least abundant lanthanide in the Earth's crust, after radioactively unstable promethium. It is an easily workable metal with a bright silvery-gray luster. It is fairly soft and slowly tarnishes in air. Despite its high price and rarity, thulium is used as a dopant in solid-state lasers. It has no significant biological role and is not particularly toxic. Artificial radioactive isotopes of thulium are used as radiation sources in some portable X-ray devices.

In 1879, the Swedish chemist Per Teodor Cleve separated two previously unknown components, which he called holmia and thulia, from the rare-earth mineral erbia; these were the oxides of holmium and thulium, respectively. His example of thulium oxide contained impurities of ytterbium oxide. A relatively pure sample of thulium oxide was first obtained in 1911. The metal itself was first obtained in 1936 by Wilhelm Klemm and Heinrich Bommer.

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