The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals (monocrystals) of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The method is named after Polish scientist Jan Czochralski, who invented the method in 1915 while investigating the crystallization rates of metals. He made this discovery by accident: instead of dipping his pen into his inkwell, he dipped it in molten tin, and drew a tin filament, which later proved to be a single crystal. The process remains economically important, as roughly 90% of all modern-day semiconductor devices use material derived from this method.
The most important application may be the growth of large cylindrical ingots, or boules, of single crystal silicon used in the electronics industry to make semiconductor devices like integrated circuits. Other semiconductors, such as gallium arsenide, can also be grown by this method, although lower defect densities in this case can be obtained using variants of the Bridgman–Stockbarger method. Other semiconductors such as Silicon Carbide are grown using other methods such as physical vapor transport.
