Cadmium telluride in the context of Tellurium


Cadmium telluride in the context of Tellurium

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⭐ Core Definition: Cadmium telluride

Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium. It is mainly used as the semiconducting material in cadmium telluride photovoltaics and an infrared optical window. It is usually sandwiched with cadmium sulfide to form a p–n junction solar PV cell.

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Cadmium telluride in the context of Solar cell

A solar cell, also known as a photovoltaic cell (PV cell), is an electronic device that converts the energy of light directly into electricity by means of the photovoltaic effect. It is a type of photoelectric cell, a device whose electrical characteristics (such as current, voltage, or resistance) vary when it is exposed to light. Individual solar cell devices are often the electrical building blocks of photovoltaic modules, known colloquially as "solar panels". Almost all commercial PV cells consist of crystalline silicon, with a market share of 95%. Cadmium telluride thin-film solar cells account for the remainder. The common single-junction silicon solar cell can produce a maximum open-circuit voltage of approximately 0.5 to 0.6 volts.

Photovoltaic cells may operate under sunlight or artificial light. In addition to producing solar power, they can be used as a photodetector (for example infrared detectors), to detect light or other electromagnetic radiation near the visible light range, as well as to measure light intensity.

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Cadmium telluride in the context of Mercury cadmium telluride

Hg1−xCdxTe or mercury cadmium telluride (also cadmium mercury telluride, MCT, MerCad Telluride, MerCadTel, MerCaT or CMT) is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions.

The amount of cadmium (Cd) in the alloy can be chosen so as to tune the optical absorption of the material to the desired infrared wavelength. CdTe is a semiconductor with a bandgap of approximately 1.5 eV at room temperature. HgTe is a semimetal, which means that its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV.

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