Bipolar junction transistor in the context of "Point-contact transistor"

In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET).

The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, especially compared to bipolar junction transistors (BJTs). However, at high frequencies or when switching rapidly, a MOSFET may require significant current to charge and discharge its gate capacitance. In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity.

Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors (BJTs). Its name signifies that transistors perform both the logic function (the first "transistor") and the amplifying function (the second "transistor"), as opposed to earlier resistor–transistor logic (RTL) and diode–transistor logic (DTL).

TTL integrated circuits (ICs) were widely used in applications such as computers, industrial controls, test equipment and instrumentation, consumer electronics, and synthesizers.

A p–n junction is a combination of two types of semiconductor materials, p-type and n-type, in a single crystal. The "n" (negative) side contains freely-moving electrons, while the "p" (positive) side contains freely-moving electron holes. Connecting the two materials causes creation of a depletion region near the boundary, as the free electrons fill the available holes, which in turn allows electric current to pass through the junction only in one direction.

p–n junctions represent the simplest case of a semiconductor electronic device; a p–n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in the form n–p–n or p–n–p. Combinations of such semiconductor devices on a single chip allow for the creation of integrated circuits.

An electrical junction is a point or area where (a) two or more conductors or (b) different semiconducting regions of differing electrical properties make physical contact. Electrical junctions types include thermoelectricity junctions, metal–semiconductor junctions and p–n junctions. Junctions are either rectifying or non-rectifying. Non-rectifying junctions comprise ohmic contacts, which are characterised by a linear current–voltage (${\displaystyle I-V}$) relation. Electronic components employing rectifying junctions include p–n diodes, Schottky diodes and bipolar junction transistors.

Resistor–transistor logic (RTL), sometimes also known as transistor–resistor logic (TRL), is a class of digital circuits built using resistors as the input network and bipolar junction transistors (BJTs) as switching devices. RTL is the earliest class of transistorized digital logic circuit; it was succeeded by diode–transistor logic (DTL) and transistor–transistor logic (TTL).

RTL circuits were first constructed with discrete components, but in 1961 it became the first digital logic family to be produced as a monolithic integrated circuit. RTL integrated circuits were used in the Apollo Guidance Computer, whose design began in 1961 and which first flew in 1966.

In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.

The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition. Slow recombination rates (or equivalently, long carrier lifetimes) are a favorable attribute of the semiconductors that comprise solar cells.